Vishay Siliconix SUP53P06-20-GE3

SUP53P06-20-GE3


  • Manufacturer: Vishay Siliconix
  • AIBOSI NO: SUP53P06-20-GE3
  • Package: TO-220-3
  • Datasheet:
  • Stock: 24320000
  • Description: P-Channel 60 V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB
  • Price:

Quantity:

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tube
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 9.2A (Ta), 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 19.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 115 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 104.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SUP53
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 500
P-Channel 60 V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB

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