Vishay Siliconix SI3442BDV-T1-GE3

SI3442BDV-T1-GE3


  • Manufacturer: Vishay Siliconix
  • AIBOSI NO: SI3442BDV-T1-GE3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet:
  • Stock: 21050000
  • Description: N-Channel 20 V 3A (Ta) 860mW (Ta) Surface Mount 6-TSOP
  • Price: $0.11

Qty

Unit Price

Ext Price

  • 3000

    $0.23

    $685.20

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Quantity:

Unit Price: $0.1142

Ext Price: $0.1142

In Stock

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 57mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 295 pF @ 10 V
FET Feature -
Power Dissipation (Max) 860mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
Base Product Number SI3442
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
N-Channel 20 V 3A (Ta) 860mW (Ta) Surface Mount 6-TSOP

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In Stock

Please send RFQ , we will respond immediately.