Vishay Siliconix IRFD010

IRFD010


  • Manufacturer: Vishay Siliconix
  • AIBOSI NO: IRFD010
  • Package: 4-DIP (0.300", 7.62mm)
  • Datasheet:
  • Stock: 89150000
  • Description: N-Channel 50 V 1.7A (Tc) 1W (Tc) Through Hole 4-HVMDIP
  • Price:

Quantity:

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Vishay Siliconix
Series -
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 860mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
Base Product Number IRFD010
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names *IRFD010
Standard Package 2,500
N-Channel 50 V 1.7A (Tc) 1W (Tc) Through Hole 4-HVMDIP

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