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Vishay Siliconix IRFB9N65A
IRFB9N65A
- Manufacturer: Vishay Siliconix
- AIBOSI NO: IRFB9N65A
- Package: TO-220-3
- Datasheet:
- Stock: 19680000
- Description: N-Channel 650 V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB
- Price:
In Stock
Please send RFQ , we will respond immediately.
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prices and inventories about the part.
Our sales will
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2. Since inventories and prices may fluctuate to
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Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 930mOhm @ 5.1A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1417 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRFB9N65 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | *IRFB9N65A |
| Standard Package | 1,000 |
N-Channel 650 V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB
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