Vishay General Semiconductor - Diodes Division VS-MBR1035-N3

VS-MBR1035-N3


  • Manufacturer: Vishay General Semiconductor - Diodes Division
  • AIBOSI NO: VS-MBR1035-N3
  • Package: TO-220-2
  • Datasheet: -
  • Stock: 17430000
  • Description: Diode 35 V 10A Through Hole TO-220AC
  • Price:

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SPECIFICATIONS

Parameters
Mfr Vishay General Semiconductor - Diodes Division
Series -
Package Tube
Product Status Obsolete
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 35 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 570 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100 µA @ 35 V
Capacitance @ Vr, F 600pF @ 5V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Operating Temperature - Junction -65°C ~ 150°C
Base Product Number MBR10
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names VSMBR1035N3
Standard Package 1,000
Diode 35 V 10A Through Hole TO-220AC

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