Vishay General Semiconductor - Diodes Division VS-GT50TP60N

VS-GT50TP60N


  • Manufacturer: Vishay General Semiconductor - Diodes Division
  • AIBOSI NO: VS-GT50TP60N
  • Package: INT-A-PAK (3 + 4)
  • Datasheet:
  • Stock: 12460000
  • Description: IGBT Module Trench Half Bridge 600 V 85 A 208 W Chassis Mount INT-A-PAK
  • Price:

Quantity:

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Vishay General Semiconductor - Diodes Division
Series -
Package Bulk
Product Status Obsolete
IGBT Type Trench
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 85 A
Power - Max 208 W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Current - Collector Cutoff (Max) 1 mA
Input Capacitance (Cies) @ Vce 3.03 nF @ 30 V
Input Standard
NTC Thermistor No
Operating Temperature 175°C (TJ)
Mounting Type Chassis Mount
Package / Case INT-A-PAK (3 + 4)
Supplier Device Package INT-A-PAK
Base Product Number GT50
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names VSGT50TP60N
Standard Package 24
IGBT Module Trench Half Bridge 600 V 85 A 208 W Chassis Mount INT-A-PAK

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