Vishay General Semiconductor - Diodes Division VS-GA200HS60S1

VS-GA200HS60S1

Manufacturer: Vishay General Semiconductor - Diodes Division
AIBOSI NO: VS-GA200HS60S1
Package: INT-A-Pak
Datasheet: -
Stock: 71670000
Description: IGBT Module Half Bridge 600 V 480 A 830 W Chassis Mount INT-A-PAK
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FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr	Vishay General Semiconductor - Diodes Division
Series	-
Package	Bulk
Product Status	Obsolete
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	480 A
Power - Max	830 W
Vce(on) (Max) @ Vge, Ic	1.21V @ 15V, 200A
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	32.5 nF @ 30 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	INT-A-Pak
Supplier Device Package	INT-A-PAK
Base Product Number	GA200
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	15