Vishay General Semiconductor - Diodes Division VS-ETF150Y65N

VS-ETF150Y65N

Manufacturer: Vishay General Semiconductor - Diodes Division
AIBOSI NO: VS-ETF150Y65N
Package: Module
Datasheet:
Stock: 80000
Description: IGBT Module NPT Half Bridge Inverter 650 V 201 A 600 W Module
Price: $68.56

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Unit Price: $68.5600

Ext Price: $68.5600

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr	Vishay General Semiconductor - Diodes Division
Series	FRED Pt®
Package	Box
Product Status	Obsolete
IGBT Type	NPT
Configuration	Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	201 A
Power - Max	600 W
Vce(on) (Max) @ Vge, Ic	2.17V @ 15V, 150A
Input	Standard
NTC Thermistor	Yes
Operating Temperature	175°C (TJ)
Package / Case	Module
Supplier Device Package	Module
Base Product Number	ETF150
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	VS-ETF150Y65NGI
Standard Package	60