Vishay General Semiconductor - Diodes Division V20120S-M3/4W

V20120S-M3/4W


  • Manufacturer: Vishay General Semiconductor - Diodes Division
  • AIBOSI NO: V20120S-M3/4W
  • Package: TO-220-3
  • Datasheet:
  • Stock: 90510000
  • Description: Diode 120 V 20A Through Hole TO-220-3
  • Price: $0.33

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  • 8000

    $0.66

    $5,300.80

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Unit Price: $0.3313

Ext Price: $0.3313

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SPECIFICATIONS

Parameters
Mfr Vishay General Semiconductor - Diodes Division
Series -
Package Tube
Product Status Active
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 120 V
Current - Average Rectified (Io) 20A
Voltage - Forward (Vf) (Max) @ If 1.33 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 250 µA @ 120 V
Capacitance @ Vr, F -
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature - Junction -40°C ~ 150°C
Base Product Number V20120
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Standard Package 1,000
Diode 120 V 20A Through Hole TO-220-3

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