Toshiba Semiconductor and Storage TPN2R304PL,L1Q

TPN2R304PL,L1Q

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: TPN2R304PL,L1Q
Package: 8-PowerVDFN
Datasheet:
Stock: 270000
Description: N-Channel 40 V 80A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Price: $0.96

Qty
Unit Price
Ext Price

10

$0.84

$8.42
100

$0.65

$64.55
500

$0.51

$255.15
1000

$0.41

$408.20
2000

$0.37

$740.00
5000

$0.34

$1,722.50
10000

$0.33

$3,317.00
25000

$0.32

$8,080.00

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Unit Price: $0.9600

Ext Price: $0.9600

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	2.4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	630mW (Ta), 104W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.1x3.1)
Package / Case	8-PowerVDFN
Base Product Number	TPN2R304
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000