STMicroelectronics STW16N65M5

STW16N65M5


  • Manufacturer: STMicroelectronics
  • AIBOSI NO: STW16N65M5
  • Package: TO-247-3
  • Datasheet:
  • Stock: 51000000
  • Description: N-Channel 650 V 12A (Tc) 90W (Tc) Through Hole TO-247-3
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Standard Package 30
Mfr STMicroelectronics
Series MDmesh™ V
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 279mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 100 V
FET Feature -
Power Dissipation (Max) 90W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number STW16N
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
N-Channel 650 V 12A (Tc) 90W (Tc) Through Hole TO-247-3

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