STMicroelectronics STP16N50M2

STP16N50M2


  • Manufacturer: STMicroelectronics
  • AIBOSI NO: STP16N50M2
  • Package: TO-220-3
  • Datasheet:
  • Stock: 32680000
  • Description: N-Channel 500 V 13A (Tc) 110W (Tc) Through Hole TO-220
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr STMicroelectronics
Series MDmesh™ M2
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 100 V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP16N
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 500 V 13A (Tc) 110W (Tc) Through Hole TO-220

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