STMicroelectronics STP11NM65N

STP11NM65N


  • Manufacturer: STMicroelectronics
  • AIBOSI NO: STP11NM65N
  • Package: TO-220-3
  • Datasheet:
  • Stock: 3340000
  • Description: N-Channel 650 V 11A (Tc) 110W (Tc) Through Hole TO-220
  • Price: $2.34

Qty

Unit Price

Ext Price

  • 10

    $2.10

    $21.04

  • 100

    $1.69

    $169.08

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Quantity:

Unit Price: $2.3400

Ext Price: $2.3400

In Stock

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr STMicroelectronics
Series MDmesh™ II
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 455mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 50 V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP11N
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 650 V 11A (Tc) 110W (Tc) Through Hole TO-220

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