STMicroelectronics STI14NM65N

STI14NM65N


  • Manufacturer: STMicroelectronics
  • AIBOSI NO: STI14NM65N
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Datasheet:
  • Stock: 89480000
  • Description: N-Channel 650 V 12A (Tc) 125W (Tc) Through Hole I2PAK
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr STMicroelectronics
Series MDmesh™ II
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 50 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number STI14N
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 650 V 12A (Tc) 125W (Tc) Through Hole I2PAK

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