STMicroelectronics STF16N60M6

STF16N60M6


  • Manufacturer: STMicroelectronics
  • AIBOSI NO: STF16N60M6
  • Package: TO-220-3 Full Pack
  • Datasheet:
  • Stock: 10000
  • Description: N-Channel 600 V 12A (Tc) 25W (Tc) Through Hole TO-220FP
  • Price: $2.83

Qty

Unit Price

Ext Price

  • 10

    $2.54

    $25.42

  • 100

    $2.04

    $204.33

  • 500

    $1.68

    $839.35

  • 1000

    $1.39

    $1,391.00

  • 2000

    $1.30

    $2,590.00

  • 5000

    $1.25

    $6,235.50

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Quantity:

Unit Price: $2.8300

Ext Price: $2.8300

In Stock

Please send RFQ , we will respond immediately.

Purchase & Inquiry

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FP
Package / Case TO-220-3 Full Pack
Base Product Number STF16
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Mfr STMicroelectronics
Series UltraFASTmesh™
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.7 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 575 pF @ 100 V
FET Feature -
Power Dissipation (Max) 25W (Tc)
N-Channel 600 V 12A (Tc) 25W (Tc) Through Hole TO-220FP

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