STMicroelectronics STB6NK60Z-1

STB6NK60Z-1


  • Manufacturer: STMicroelectronics
  • AIBOSI NO: STB6NK60Z-1
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Datasheet:
  • Stock: 36110000
  • Description: N-Channel 600 V 6A (Tc) 110W (Tc) Through Hole I2PAK
  • Price: $0.28

Qty

Unit Price

Ext Price

  • 2000

    $0.55

    $1,106.60

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Quantity:

Unit Price: $0.2767

Ext Price: $0.2767

In Stock

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 905 pF @ 25 V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number STB6NK60
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-5955-5
Standard Package 50
Mfr STMicroelectronics
Series SuperMESH™
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
N-Channel 600 V 6A (Tc) 110W (Tc) Through Hole I2PAK

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