Rohm Semiconductor R6008ANX

R6008ANX


  • Manufacturer: Rohm Semiconductor
  • AIBOSI NO: R6008ANX
  • Package: TO-220-3 Full Pack
  • Datasheet:
  • Stock: 50700000
  • Description: N-Channel 600 V 8A (Tc) 50W (Tc) Through Hole TO-220FM
  • Price: $0.96

Qty

Unit Price

Ext Price

  • 500

    $1.92

    $960.40

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Quantity:

Unit Price: $0.9604

Ext Price: $0.9604

In Stock

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Rohm Semiconductor
Series -
Package Bulk
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 25 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
Base Product Number R6008
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 846-R6008ANX
Standard Package 500
N-Channel 600 V 8A (Tc) 50W (Tc) Through Hole TO-220FM

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