Renesas Electronics America Inc IDT70P3517S233RMI

IDT70P3517S233RMI


  • Manufacturer: Renesas Electronics America Inc
  • AIBOSI NO: IDT70P3517S233RMI
  • Package: 576-BBGA, FCBGA
  • Datasheet:
  • Stock: 18470000
  • Description: SRAM - Dual Port, Synchronous QDR II Memory IC 9Mbit Parallel 233 MHz 7.2 ns 576-FCBGA (25x25)
  • Price:

Quantity:

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Renesas Electronics America Inc
Series -
Package Tray
Product Status Obsolete
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Dual Port, Synchronous QDR II
Memory Size 9Mbit
Memory Organization 256K x 36
Memory Interface Parallel
Clock Frequency 233 MHz
Write Cycle Time - Word, Page -
Access Time 7.2 ns
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 576-BBGA, FCBGA
Supplier Device Package 576-FCBGA (25x25)
Base Product Number IDT70P3517
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 4 (72 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Other Names 70P3517S233RMI
Standard Package 3
SRAM - Dual Port, Synchronous QDR II Memory IC 9Mbit Parallel 233 MHz 7.2 ns 576-FCBGA (25x25)

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