onsemi FQPF19N10L

FQPF19N10L


  • Manufacturer: onsemi
  • AIBOSI NO: FQPF19N10L
  • Package: TO-220-3 Full Pack
  • Datasheet:
  • Stock: 33430000
  • Description: N-Channel 100 V 13.6A (Tc) 38W (Tc) Through Hole TO-220F-3
  • Price:

Quantity:

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr onsemi
Series QFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 13.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 25 V
FET Feature -
Power Dissipation (Max) 38W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package / Case TO-220-3 Full Pack
Base Product Number FQPF1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
N-Channel 100 V 13.6A (Tc) 38W (Tc) Through Hole TO-220F-3

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In Stock

Please send RFQ , we will respond immediately.