onsemi 2N5401TAR

2N5401TAR


  • Manufacturer: onsemi
  • AIBOSI NO: 2N5401TAR
  • Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Datasheet:
  • Stock: 60700000
  • Description: Bipolar (BJT) Transistor PNP 150 V 600 mA 400MHz 625 mW Through Hole TO-92-3
  • Price:

Quantity:

In Stock

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr onsemi
Series -
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 600 mA
Voltage - Collector Emitter Breakdown (Max) 150 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V
Power - Max 625 mW
Frequency - Transition 400MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Base Product Number 2N5401
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 2,000
Bipolar (BJT) Transistor PNP 150 V 600 mA 400MHz 625 mW Through Hole TO-92-3

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