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Infineon Technologies IRF7779L2TR1PBF
IRF7779L2TR1PBF
- Manufacturer: Infineon Technologies
- AIBOSI NO: IRF7779L2TR1PBF
- Package: DirectFET™ Isometric L8
- Datasheet:
- Stock: 54890000
- Description: N-Channel 150 V 375A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8
- Price:
In Stock
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Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 375A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6660 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Package / Case | DirectFET™ Isometric L8 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 1,000 |
N-Channel 150 V 375A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8
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