Click to send email
Professional supplier of electronic components
Infineon Technologies IRF6709S2TR1PBF
IRF6709S2TR1PBF
- Manufacturer: Infineon Technologies
- AIBOSI NO: IRF6709S2TR1PBF
- Package: DirectFET™ Isometric S1
- Datasheet:
- Stock: 64440000
- Description: N-Channel 25 V 12A (Ta), 39A (Tc) 1.8W (Ta), 21W (Tc) Surface Mount DirectFET™ Isometric S1
- Price:
In Stock
Please send RFQ , we will respond immediately.
Purchase
You may place an order without registering to AIBOSI.
We strongly suggest you sign in before purchasing
as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the
latest
prices and inventories about the part.
Our sales will
reply to
your request by email within 24 hours.
1. You'll receive an order information email in your
inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to
some
extent, the sales manager is going to reconfirm the order and let you know
if there
are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 39A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 13 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 21W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DirectFET™ Isometric S1 |
| Package / Case | DirectFET™ Isometric S1 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 1,000 |
N-Channel 25 V 12A (Ta), 39A (Tc) 1.8W (Ta), 21W (Tc) Surface Mount DirectFET™ Isometric S1