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Infineon Technologies IPS60R1K0PFD7SAKMA1
IPS60R1K0PFD7SAKMA1
- Manufacturer: Infineon Technologies
- AIBOSI NO: IPS60R1K0PFD7SAKMA1
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 9660000
- Description: N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
- Price: $0.89
Qty
Unit Price
Ext Price
-
10
$0.80
$7.99
-
100
$0.62
$62.33
-
500
$0.51
$257.45
-
1000
$0.41
$406.50
-
2000
$0.38
$758.80
-
5000
$0.36
$1,802.00
-
10000
$0.35
$3,469.00
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Unit Price: $0.8900
Ext Price: $0.8900
In Stock
Please send RFQ , we will respond immediately.
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Our sales will
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Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 26W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Base Product Number | IPS60R1 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 75 |
| Mfr | Infineon Technologies |
| Series | CoolMOS™PFD7 |
| Package | Tube |
| Product Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3