Infineon Technologies IPD12CNE8N G

IPD12CNE8N G


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IPD12CNE8N G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet:
  • Stock: 29050000
  • Description: N-Channel 85 V 67A (Tc) 125W (Tc) Surface Mount PG-TO252-3
  • Price:

Quantity:

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12.4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4340 pF @ 40 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD12C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
N-Channel 85 V 67A (Tc) 125W (Tc) Surface Mount PG-TO252-3

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