onsemi NTC080N120SC1

NTC080N120SC1


  • Manufacturer: onsemi
  • AIBOSI NO: NTC080N120SC1
  • Package: Die
  • Datasheet:
  • Stock: 33970000
  • Description: N-Channel 1200 V 31A (Tc) 178W (Tc) Surface Mount Die
  • Price:

Quantity:

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr onsemi
Series -
Package Tray
Product Status Obsolete
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1112 pF @ 800 V
FET Feature -
Power Dissipation (Max) 178W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 488-NTC080N120SC1
Standard Package 1
N-Channel 1200 V 31A (Tc) 178W (Tc) Surface Mount Die

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