Taiwan Semiconductor Corporation 1N5822HB0G

1N5822HB0G


  • Manufacturer: Taiwan Semiconductor Corporation
  • AIBOSI NO: 1N5822HB0G
  • Package: DO-201AD, Axial
  • Datasheet:
  • Stock: 41170000
  • Description: Diode 40 V 3A Through Hole DO-201AD
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr Taiwan Semiconductor Corporation
Series Automotive, AEC-Q101
Package Bulk
Product Status Active
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 40 V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Max) @ If 525 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 500 µA @ 40 V
Capacitance @ Vr, F 200pF @ 4V, 1MHz
Mounting Type Through Hole
Package / Case DO-201AD, Axial
Supplier Device Package DO-201AD
Operating Temperature - Junction -55°C ~ 125°C
Base Product Number 1N5822
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Standard Package 500
Diode 40 V 3A Through Hole DO-201AD

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In Stock

Please send RFQ , we will respond immediately.