Infineon Technologies IPA65R095C7XKSA1

IPA65R095C7XKSA1


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IPA65R095C7XKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet:
  • Stock: 20770000
  • Description: N-Channel 650 V 12A (Tc) 34W (Tc) Through Hole PG-TO220-FP
  • Price: $3.24

Quantity:

Unit Price: $3.2350

Ext Price: $3.2350

In Stock

Please send RFQ , we will respond immediately.

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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Currently, our products are shipped through DHL, FedEx, SF, and UPS.

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2140 pF @ 400 V
FET Feature -
Power Dissipation (Max) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
Base Product Number IPA65R095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 500
Mfr Infineon Technologies
Series CoolMOS™ C7
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id 4V @ 590µA
N-Channel 650 V 12A (Tc) 34W (Tc) Through Hole PG-TO220-FP

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