Toshiba Semiconductor and Storage HN2C01FE-GR(T5L,F)

HN2C01FE-GR(T5L,F)

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: HN2C01FE-GR(T5L,F)
Package: SOT-563, SOT-666
Datasheet:
Stock: 88180000
Description: Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 60MHz 100mW Surface Mount ES6
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SPECIFICATIONS

Parameters
Standard Package	4,000
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Product Status	Obsolete
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Power - Max	100mW
Frequency - Transition	60MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6
Base Product Number	HN2C01
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095