Infineon Technologies IPA65R600E6XKSA1

IPA65R600E6XKSA1


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IPA65R600E6XKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet:
  • Stock: 28430000
  • Description: N-Channel 650 V 7.3A (Tc) 28W (Tc) Through Hole PG-TO220-FP
  • Price: $0.99

Quantity:

Unit Price: $0.9900

Ext Price: $0.9900

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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V
FET Feature -
Power Dissipation (Max) 28W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
Base Product Number IPA65R600
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 650 V 7.3A (Tc) 28W (Tc) Through Hole PG-TO220-FP

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In Stock

Please send RFQ , we will respond immediately.