Toshiba Semiconductor and Storage TW015Z65C,S1F

TW015Z65C,S1F


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: TW015Z65C,S1F
  • Package: TO-247-4
  • Datasheet: -
  • Stock: 1200000
  • Description: N-Channel 650 V 100A (Tc) 342W (Tc) Through Hole TO-247-4L(X)
  • Price: $24.41

Quantity:

Unit Price: $24.4050

Ext Price: $24.4050

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SPECIFICATIONS

Parameters
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 22mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 5V @ 11.7mA
Gate Charge (Qg) (Max) @ Vgs 128 nC @ 18 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 4850 pF @ 400 V
FET Feature -
Power Dissipation (Max) 342W (Tc)
Operating Temperature 175°C
Mounting Type Through Hole
Supplier Device Package TO-247-4L(X)
Package / Case TO-247-4
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
N-Channel 650 V 100A (Tc) 342W (Tc) Through Hole TO-247-4L(X)

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