Toshiba Semiconductor and Storage TW030Z120C,S1F

TW030Z120C,S1F

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: TW030Z120C,S1F
Package: TO-247-4
Datasheet: -
Stock: 1200000
Description: N-Channel 1200 V 60A (Tc) 249W (Tc) Through Hole TO-247-4L(X)
Price: $15.21

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Unit Price: $15.2050

Ext Price: $15.2050

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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	41mOhm @ 30A, 18V
Vgs(th) (Max) @ Id	5V @ 13mA
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 18 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	2925 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	249W (Tc)
Operating Temperature	175°C
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L(X)
Package / Case	TO-247-4
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30