STMicroelectronics STB23NM60ND

STB23NM60ND


  • Manufacturer: STMicroelectronics
  • AIBOSI NO: STB23NM60ND
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Datasheet:
  • Stock: 45180000
  • Description: N-Channel 600 V 19.5A (Tc) 150W (Tc) Surface Mount D2PAK
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr STMicroelectronics
Series FDmesh™ II
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 50 V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB23N
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-8472-2
Standard Package 1,000
N-Channel 600 V 19.5A (Tc) 150W (Tc) Surface Mount D2PAK

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