Toshiba Semiconductor and Storage RN2904FE,LXHF(CT

RN2904FE,LXHF(CT


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: RN2904FE,LXHF(CT
  • Package: SOT-563, SOT-666
  • Datasheet:
  • Stock: 80000
  • Description: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
  • Price: $0.19

Quantity:

Unit Price: $0.1900

Ext Price: $0.1900

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SPECIFICATIONS

Parameters
Mfr Toshiba Semiconductor and Storage
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Product Status Active
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 47kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Base Product Number RN2904
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 4,000
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6

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