Vishay Siliconix SIHFR1N60A-GE3

SIHFR1N60A-GE3


  • Manufacturer: Vishay Siliconix
  • AIBOSI NO: SIHFR1N60A-GE3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet:
  • Stock: 47330000
  • Description: N-Channel 600 V 1.4A (Tc) 36W (Tc) Surface Mount TO-252AA
  • Price: $0.50

Quantity:

Unit Price: $0.5000

Ext Price: $0.5000

In Stock

Please send RFQ , we will respond immediately.

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Vishay Siliconix
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7Ohm @ 840mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 229 pF @ 25 V
FET Feature -
Power Dissipation (Max) 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHFR1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
N-Channel 600 V 1.4A (Tc) 36W (Tc) Surface Mount TO-252AA

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