Toshiba Semiconductor and Storage RN1706JE(TE85L,F)

RN1706JE(TE85L,F)

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: RN1706JE(TE85L,F)
Package: SOT-553
Datasheet:
Stock: 15190000
Description: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV
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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Cut Tape (CT)
Product Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	4.7kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-553
Supplier Device Package	ESV
Base Product Number	RN1706
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	4,000