Toshiba Semiconductor and Storage TPHR9003NL1,LQ

TPHR9003NL1,LQ


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: TPHR9003NL1,LQ
  • Package: 8-PowerTDFN
  • Datasheet: -
  • Stock: 90000
  • Description: N-Channel 30 V 150A (Tc) 800mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5.75)
  • Price: $0.80

Quantity:

Unit Price: $0.7950

Ext Price: $0.7950

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SPECIFICATIONS

Parameters
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 15 V
FET Feature -
Power Dissipation (Max) 800mW (Ta), 170W (Tc)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5.75)
Package / Case 8-PowerTDFN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000
N-Channel 30 V 150A (Tc) 800mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5.75)

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