Vishay Siliconix SI5858DU-T1-E3

SI5858DU-T1-E3


  • Manufacturer: Vishay Siliconix
  • AIBOSI NO: SI5858DU-T1-E3
  • Package: PowerPAK® ChipFET™ Single
  • Datasheet:
  • Stock: 45130000
  • Description: N-Channel 20 V 6A (Tc) 2.3W (Ta), 8.3W (Tc) Surface Mount PowerPAK® ChipFET™ Single
  • Price:

Quantity:

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Vishay Siliconix
Series LITTLE FOOT®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 39mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2.3W (Ta), 8.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® ChipFET™ Single
Package / Case PowerPAK® ChipFET™ Single
Base Product Number SI5858
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
N-Channel 20 V 6A (Tc) 2.3W (Ta), 8.3W (Tc) Surface Mount PowerPAK® ChipFET™ Single

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In Stock

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