Toshiba Semiconductor and Storage TPN4R712MD,L1Q

TPN4R712MD,L1Q


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: TPN4R712MD,L1Q
  • Package: 8-PowerVDFN
  • Datasheet:
  • Stock: 40000
  • Description: P-Channel 20 V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
  • Price: $0.85

Qty

Unit Price

Ext Price

  • 10

    $0.75

    $7.45

  • 100

    $0.57

    $57.11

  • 500

    $0.45

    $225.75

  • 1000

    $0.36

    $361.20

  • 2000

    $0.33

    $654.60

  • 5000

    $0.30

    $1,524.00

  • 10000

    $0.29

    $2,935.00

  • 25000

    $0.29

    $7,150.00

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Quantity:

Unit Price: $0.8500

Ext Price: $0.8500

In Stock

Please send RFQ , we will respond immediately.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 10 V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.1x3.1)
Package / Case 8-PowerVDFN
Base Product Number TPN4R712
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000
P-Channel 20 V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

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