Toshiba Semiconductor and Storage RN2610(TE85L,F)

RN2610(TE85L,F)

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: RN2610(TE85L,F)
Package: SC-74, SOT-457
Datasheet:
Stock: 20000
Description: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6
Price: $0.48

Qty
Unit Price
Ext Price

10

$0.36

$3.56
100

$0.20

$20.18
500

$0.13

$66.85
1000

$0.10

$102.50
3000

$0.09

$259.50
6000

$0.08

$467.40
15000

$0.07

$1,038.00
30000

$0.06

$1,947.00
75000

$0.06

$4,312.50
150000

$0.06

$8,385.00

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Unit Price: $0.4800

Ext Price: $0.4800

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Transistor Type	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	4.7kOhms
Resistor - Emitter Base (R2)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	200MHz
Power - Max	300mW
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Supplier Device Package	SM6
Base Product Number	RN2610
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	3,000