Taiwan Semiconductor Corporation TSM60N1R4CH C5G

TSM60N1R4CH C5G


  • Manufacturer: Taiwan Semiconductor Corporation
  • AIBOSI NO: TSM60N1R4CH C5G
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet:
  • Stock: 16190000
  • Description: N-Channel 600 V 3.3A (Tc) 38W (Tc) Through Hole TO-251 (IPAK)
  • Price: $0.22

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  • 15000

    $0.44

    $6,628.50

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Unit Price: $0.2210

Ext Price: $0.2210

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SPECIFICATIONS

Parameters
Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 370 pF @ 100 V
FET Feature -
Power Dissipation (Max) 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251 (IPAK)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number TSM60
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 75
N-Channel 600 V 3.3A (Tc) 38W (Tc) Through Hole TO-251 (IPAK)

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