Renesas Electronics America Inc 71V416S10YG8

71V416S10YG8


  • Manufacturer: Renesas Electronics America Inc
  • AIBOSI NO: 71V416S10YG8
  • Package: 44-BSOJ (0.400", 10.16mm Width)
  • Datasheet:
  • Stock: 58180000
  • Description: SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-SOJ
  • Price:

Quantity:

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Renesas Electronics America Inc
Series -
Package Tape & Reel (TR)
Product Status Obsolete
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package 44-SOJ
Base Product Number 71V416S
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Standard Package 500
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-SOJ

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