onsemi 2SJ651

2SJ651

Manufacturer: onsemi
AIBOSI NO: 2SJ651
Package: TO-220-3 Full Pack
Datasheet:
Stock: 40000
Description: P-Channel 60 V 20A (Ta) 2W (Ta), 25W (Tc) Through Hole TO-220ML
Price: $0.61

Qty
Unit Price
Ext Price

249

$1.21

$301.29

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Unit Price: $0.6050

Ext Price: $0.6050

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Purchase

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220ML
Package / Case	TO-220-3 Full Pack
RoHS Status	ROHS3 Compliant
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	100
Mfr	onsemi
Series	-
Package	Bulk
Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Rds On (Max) @ Id, Vgs	60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 25W (Tc)