NXP USA Inc. BUK951R6-30E,127

BUK951R6-30E,127


  • Manufacturer: NXP USA Inc.
  • AIBOSI NO: BUK951R6-30E,127
  • Package: TO-220-3
  • Datasheet: -
  • Stock: 86470000
  • Description: N-Channel 30 V 120A (Tc) 349W (Tc) Through Hole TO-220AB
  • Price:

Quantity:

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Shipping Cost

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr NXP USA Inc.
Series TrenchMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 16150 pF @ 25 V
FET Feature -
Power Dissipation (Max) 349W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number BUK95
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 30 V 120A (Tc) 349W (Tc) Through Hole TO-220AB

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