Nexperia USA Inc. PDTC114ET/DG/B2,21

PDTC114ET/DG/B2,21

Manufacturer: Nexperia USA Inc.
AIBOSI NO: PDTC114ET/DG/B2,21
Package: TO-236-3, SC-59, SOT-23-3
Datasheet:
Stock: 64790000
Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 MHz 250 mW Surface Mount TO-236AB
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SPECIFICATIONS

Parameters
Mfr	Nexperia USA Inc.
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
Product Status	Obsolete
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	1µA
Frequency - Transition	230 MHz
Power - Max	250 mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	TO-236AB
Base Product Number	PDTC114
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.21.0075
Other Names	934062506215
Standard Package	3,000