Micron Technology Inc. NAND512R3A2SZA6E

NAND512R3A2SZA6E


  • Manufacturer: Micron Technology Inc.
  • AIBOSI NO: NAND512R3A2SZA6E
  • Package: 63-TFBGA
  • Datasheet:
  • Stock: 41100000
  • Description: FLASH - NAND Memory IC 512Mbit Parallel 50 ns 63-VFBGA (9x11)
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr Micron Technology Inc.
Series -
Package Tray
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 50ns
Access Time 50 ns
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 63-TFBGA
Supplier Device Package 63-VFBGA (9x11)
Base Product Number NAND512
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Standard Package 290
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 63-VFBGA (9x11)

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