Micron Technology Inc. NAND04GW3B2DN6E

NAND04GW3B2DN6E


  • Manufacturer: Micron Technology Inc.
  • AIBOSI NO: NAND04GW3B2DN6E
  • Package: 48-TFSOP (0.724", 18.40mm Width)
  • Datasheet:
  • Stock: 41240000
  • Description: FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr Micron Technology Inc.
Series -
Package Tray
Product Status Discontinued at Digi-Key
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP
Base Product Number NAND04G
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Other Names -NAND04GW3B2DN6E
Standard Package 576
FLASH - NAND Memory IC 4Gbit Parallel 25 ns 48-TSOP

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