Infineon Technologies IRF150P221XKMA1

IRF150P221XKMA1


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IRF150P221XKMA1
  • Package: TO-247-3
  • Datasheet:
  • Stock: 36600000
  • Description: N-Channel 150 V 186A (Tc) 341W (Tc) Through Hole PG-TO247-3
  • Price:

Quantity:

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series StrongIRFET™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 75 V
FET Feature -
Power Dissipation (Max) 341W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Base Product Number IRF150
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
N-Channel 150 V 186A (Tc) 341W (Tc) Through Hole PG-TO247-3

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