Infineon Technologies IMW65R107M1HXKSA1

IMW65R107M1HXKSA1

Manufacturer: Infineon Technologies
AIBOSI NO: IMW65R107M1HXKSA1
Package: TO-247-3
Datasheet:
Stock: 90000
Description: N-Channel 650 V 20A (Tc) 75W (Tc) Through Hole PG-TO247-3-41
Price: $10.90

Qty
Unit Price
Ext Price

10

$9.85

$98.46
100

$8.15

$815.15
500

$7.10

$3,549.10
1000

$6.18

$6,182.30

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Quantity:

Add to Cart

Unit Price: $10.9000

Ext Price: $10.9000

In Stock

Please send RFQ , we will respond immediately.

Company Name

Contact Name

Business Email

Quantity

Purchase & Inquiry

Transport

Packing

Shipping

Payment

Purchase

You may place an order without registering to AIBOSI.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr	Infineon Technologies
Series	CoolSiC™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	142mOhm @ 8.9A, 18V
Vgs(th) (Max) @ Id	5.7V @ 3mA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 18 V
Vgs (Max)	+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds	496 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	75W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3
Base Product Number	IMW65R107
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30